Testing and analytics

CiS provides clients with services in the field of material and semiconductor analytics, error analysis and quality assurance. The institute has many years of experience, especially in the field of material and semiconductor analytics of processes and technologies for microsystem engineering and microelectronics. We offer analytical services in the following fields:

Photolithography and etching processes

  • REM evaluation of structures to determine structural widths and modular dimensions plus structuring (flank shape, flank angle) on cross fractures, cuts and ion-jet-etched compounds
  • Geometric measurement of silicon structures by means of contactless infrared film thickness interferometry

Doping and high temperature

  • Penetration depth specification on angled polishes following wet chemical decoration and light and electron-optical measurement
  • Analysis of depth profiles of doping elements to determine concentration flow, dosage and penetration depth
  • Image of lateral distribution of doping elements
  • Qualitative evaluation of cleaning processes

Metallisation and passivation

  • REM assessment for defect analysis and determination of structural parameters on surfaces and cross-section preparations
  • Analyses to determine trace elements in metallised layers
  • Assessment of surface topography by means of optical and tactile profilometry

Overall process analysis

  • REM assessment of vertical structure on cross-section preparations
  • Particle, element and defect analysis using ESMA
  • Surface characterisation and roughness measurements using profilometry and scanning force microscopy
  • Arrangement of other services from a broad analytics spectrum working with associates with years of experience
  • Technological documentation

The following devices and methods are available:

  • Metallography (grinding, target grinding and polishing for samples up to 4 inches)
  • Sample preparation (vacuum vaporisation, sputtering and ion etching facility)
  • Optical microscopy
  • Scanning electron microscopy
  • Scanning force microscopy (roughness analysis in the nm range)
  • Electron probe microanalysis (EDX)
  • Dynamic secondary ion mass spectrometry (depth profile analysis, ion imaging, mass spectrum)
  • Optical surface profilometry (surface and line scans by means of confocal and autofocus sensor)