Radiation detectors

The CERN nuclear research centre in Geneva has radiation detectors from CiS involved in researching the big bang. In 2007 CiS received the Atlas Supplier Award and in 2009 the CMS Gold Award from the European nuclear research centre CERN, whereby the development and provision of special silicon detectors were acknowledged for this greatest physics experiment of all.

The radiation detectors developed and produced at CiS based on a special silicon technology detect high-energy particles in high-energy physics, medicine and material diagnosis. The basic design includes strip and pixel detectors, which are based on the interaction of particle radiation and semiconductors. The sensitive components are formed on high or highest resistance silicon wafers through controllable gates via boron-implanted areas.

Mode of action of one-sided radiation detector left section cross-section in x-direction right section cross-section in y-direction


  • 4-inch silicon wafer; polished double-sided, high resistance MCZ or FZ wafer n-type or p-type: 1,000…10,000 Ohm cm
  • From Q3/2011 6-inch silicon wafer detector prototypes
  • Wafer thickness 150…250…500µm
  • Geometry: micro-strip or pixel detector, one-sided or double-sided versions
  • Directly coupled (dc) or capacitive coupled (ac) detector elements
  • Biasing of detector elements: implanted resistances, doped poly-silicon resistances (structured meander), punch-through biasing, FOX-FET-biasing
  • Multi-guard ring structures
  • Structural spacing or raster 50–200µm
  • Double-sided structuring +/- 1µm
  • One or two-level metallisation
  • Various passivations: Si3N4, SiON, SiO2
  • Defect engineering: esp. through oxygen enrichment



Outstanding performance:

  • High and highest radiation hardness
  • Low leakage current
  • High electrical strength



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