Nanoscale III-V/silicon heterostructures for high-efficiency solar cells.
| German title: | Nanoskalige III-V/Silizium Heterostrukturen für hocheffiziente Solarzellen | |
| Acronym: | Nano-III-V-pins | |
| Duration: | 1st April 2011 - 1st October 2014 | |
| Description: | The aim of the overall project was to demonstrate experimentally and theoretically that quantum well systems of III-V semiconductors can exceed the Shockley-Queisser limit of the maximum achievable solar cell efficiency without having to resort to multiple cells. maximum achievable solar cell efficiency can be exceeded without having to resort to multiple cells. Such quantum well structures were realized here in coaxial core-clad nanowire solar cells. In this way, a cost-effective system with more than two energy levels could be created, in which high absorption of light was combined with short transport paths for the charge carriers. These advantages, together with the possibility of epitaxy on Si substrates, promise a significant cost reduction compared to previous high-performance solar cells. The CiS Research Institute worked on the characterization and contacting of the nanowire structures as a subcontractor of the TU Ilmenau. Among other things, photoluminescence measurements were carried out on the individual wire and contact systems were developed for evaluation and industrial implementation. |
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| Markets: | Photovoltaics | |
| Partners: | TU Ilmenau, Helmholtz-Zentrum Berlin, Universität Duisburg-Essen, Humboldt-Universität Berlin, Technische Universität Berlin, Azur Space Solar Power GmbH | |
| Funded by: | BMBF |  |
| Project sponsor: | Projektträger Jülich | |
| Funding code: | 03 SF 0404 A | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
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