Integrity-controlled compensated SoG silicon
|German title:||Integritäts-kontrolliertes kompensiertes SoG Silizium|
|Duration:||1st May 2012 - 30th April 2014|
|Description:||The research project is divided into three parts.
1. Building on the knowledge base for EG silicon, a fundamental understanding of SoG silicon will be developed. Here, the influence of acceptor and donor compensation, impurities such as Ti, Ni, Mo, Cr and defect complexes such as iron-boron pairs (FeB), iron-aluminum pairs (FeAl), aluminum-oxygen (AlO) and boron-oxygen (BO) will be investigated.
2. Development of the measurement methodology for SoG silicon.
3. Evaluation of the measurement methods for application in the production of moca SoG silicon.
K. Lauer, C. Möller, D. Schulze, T. Bartel, and F. Kirscht, "Calibration of excitonic photoluminescence to determine high aluminum concentrations in silicon," physica status solidi (RRL) - Rapid Research Letters, vol. 7, no. 4, pp. 265-267, Apr. 2013.
C. Möller, T. Bartel, F. Gibaja, and K. Lauer, "Iron-boron pairing kinetics in illuminated p-type and in boron/phosphorus co-doped n-type silicon," Journal of Applied Physics, vol. 116, no. 2, p. 024503, Jul. 2014.
C. Möller, T. Bartel, F. Gibaja, F. Kirscht, and K. Lauer, "Iron-acceptor Pair Kinetics in Compensated n-type Silicon," Energy Procedia, vol. 55, pp. 564-569, 2014.
K. Lauer, C. Möller, T. Bartel, and F. Kirscht, "Low-temperature FTIR Investigation of Aluminum Doped Solar-grade Silicon," Energy Procedia, vol. 55, pp. 545-551, 2014.
T. Bartel, F. Gibaja, O. Graf, D. Gross, M. Kaes, M. Heuer, F. Kirscht, C. Möller, and K. Lauer, "Dynamics of iron-acceptor-pair formation in co-doped silicon," Applied Physics Letters, vol. 103, no. 20, p. 202109, Nov. 2013.
|Partners:||Calisolar GmbH, Magnusstraße 11,12489 Berlin|
|Funding code:||KF 2020409AG2|
|Contact:||Contact us about this project via our former business unit Silicon Detectors|
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