High-precision temperature diodes for better compensation of temperature cross-sensitivity
|German title:||Hochgenaue Temperaturdioden zur besseren Kompensation der Temperaturquerempfindlichkeit|
|Duration:||1st January 2013 - 30th June 2015|
|Description:||Temperature, along with pressure and humidity, usually represents the greatest cross-sensitivity for primary signals of microsystems. This is particularly critical in detection systems, for example, for sensitive polymers, transducers such as photodiodes, or even signal preprocessing.
Semiconductor diodes and transistors are small, inexpensive, highly sensitive and almost linear temperature sensors. Due to the manufacturing process, there is always a scattering of specimens, which prevents the interchangeability of the components without individual calibration.
By developing technological processes for silicon wafers, a reproducible sensitivity dU/dT, i.e. the slope of voltage versus temperature, was achieved
Process simulations and subsequent test series optimized implantation parameters and geometry factors in such a way that the deviation of the U/I characteristic from the ideal curve is minimal.
For the first time, this approach allows cost-saving and reliable single-point calibration.
Using SOI technology, leakage currents were reduced and highly stable measurements were achieved in a temperature range of up to 220°C.
In addition, calibration-free temperature measurement is also possible with the aid of simple algorithms (e.g. Goloub method).
|Contact:||Contact us about this project via our business unit MEMS|
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