CiS

International conference on superconducting electronics and quantum technologies takes place in Erfurt

17. June 2025/in Events, MEMS, MOEMS, Quantum

The International Superconductive Electronics Conference (ISEC), the biennial scientific conference that brings together global experts in the field of superconductive electronics in a forum, kicked off in Erfurt on Monday. The international series of events is being held at the Radisson Blu Hotel Erfurt until Thursday and covers key topics for the future, such as quantum computers and energy-efficient electronics, and provides a forum for innovations in science and industry

Trade fair premiere at EPHJ 2025 in Geneva

2. June 2025/in Events, MEMS, MOEMS

Starting tomorrow, the CiS Research Institute will be presenting its portfolio for the first time at EPHJ, an international trade fair for high precision in Geneva. Until 6th June 2025, we will be presenting our silicon-based sensor technologies and expertise in the field of MEMS and MOEMS to an international audience of experts at booth J122 in the Palexpo halls in Geneva

ISEC 2025 – Full Agenda with plenary speakers is available

9. May 2025/in Events

The complete program of ISEC 2025 is available on the website www.isec2025.org. From June 15-19, 2025, the world’s experts in the field of superconducting electronics will meet in a forum in Erfurt

NO-TICE project launch: Minimizing the temperature dependence of the measurement signal due to zero point drift

14. April 2025/0 Comments/in Force, MEMS, Pressure

The newly launched NO-TICE research project at the CiS Research Institute involves investigating ways of compensating for the influence of temperature, particularly on the zero point of the raw signal in sensors with very low transverse strain sensitivity, in order to minimize the amount of calibration required and thus conserve resources in terms of costs, time, and materials

CiS Research Institute at the international conference MATERIALSMEET2025 in Budapest

2. April 2025/in Events, Simulation & Design

The international conference MATERIALSMEET2025 will take place in Budapest from 10th-12th April 2025, at which Dr. Tobehn-Steinhäuser from the CiS Research Institute will discuss the topic “Semiconductor devices at cryogenic temperatures” for the application of hydrogen on 11th April 2025 as an invited speaker

Visit us at the HANNOVER MESSE 2025

25. March 2025/in Events, MEMS, MOEMS

From 31st March to 4th April 2025, the CiS Research Institute will be presenting its technology portfolio at #hmi25. In Hall 6 at the LEG joint stand in Thuringia (Stand F61), our experts will be presenting silicon-based MEMS and MOEMS sensor concepts for a wide range of applications

End of project PoRr: Photodiodes without back reflection

20. March 2025/in Measurement, MOEMS, Packaging

In the PoRr project, a team of scientists from the CiS Research Institute developed photodiodes with significantly reduced back reflection. Reflections are reduced by 15% by means of special surface structuring. Specially developed measuring stations make it possible to record the proportion of total reflection at different wavelengths as well as the angular distribution of the reflected light at different angles of incidence

CoGeQ project meeting at the CiS Research Institute

14. March 2025/in Events, Packaging, Quantum

On 7th March 2025, the partners of the BMBF joint project “Competitive German Quantum Computer (CoGeQ)” discussed the current project status at the CiS Research Institute in Erfurt

ISEC 2025 in Erfurt: Registration started

12. March 2025/in Events

Registration for the 19th edition of the International Superconductive Electronics Conference (ISEC), which will take place from 15th to 19th June 2025 in Erfurt, Germany, has started! Secure your participation and benefit from the attractive early bird discount until 28th April 2025!

CiS Research Institute at the DPG Spring Conference in Regensburg

10. March 2025/in Events

On 17th March 2025, Dr. Kevin Lauer will discuss the topic “Impact of a magnetic field on low-temperature photoluminescence of indium-doped silicon” in his lecture. His contribution invites discussion on the glow of acceptor-interstitial silicon defects (ASi-Sii)