Project start LaWaDos: High-temperature-optimized contact metallizations
/in High Temperature, MEMSThe aim of the LaWaDos research project is to produce high-temperature-stable contact metallizations for wire bonding contacts on sensor elements that allow better monitoring of thermal processes
Thuringia’s Minister President Bodo Ramelow visits the CiS Research Institute at Hannover Messe 2024
/in Events, PoliticsOn his tour of the trade fair on 22.04.2024 as part of the Hannover Messe, Thuringian Minister President Bodo Ramelow and Christoph Eggers, Head of Division in the Thuringian State Chancellery, visited our exhibition at the LEG Thüringen joint stand in Hall 3, Stand D76. Dr. Klaus Ettrich, Head of the MEMS Business Unit, and Dr. Thomas Frank, Head of the MEMS Department, explained the CiS Research Institute’s portfolio to the guests and demonstrated the latest research results
Highlight of the CiS Forschungsinstitut at the Hannover Messe 2024: Galvanically isolated incremental sensor
/in Events, IR, Pressure, UVDuring the Hannover Messe, which starts next week, the CiS Research Institute will be presenting an electrically isolated incremental sensor at the joint Thuringian stand in Hall 3, Stand D76. As part of the GalGiS funding project, new silicon technologies have been developed to achieve such galvanic isolation at chip level
Packaging technology for thermal flow sensors
/in Medical technology, MEMS, PackagingThe newly launched Pack-Flu project deals with the design, realization and characterization of a robust and innovative packaging platform for low-cost MEMS-based microcalorimetric flow sensors for use in gas pipelines or ventilation systems. The platform serves as a scalable basis for flow sensors for analyzing and controlling air flow, hydrogen and other non-aggressive gases with known flow direction (e.g. in pipelines) with high accuracy
MEMS Pirani sensor for fine and high vacuum
/in MEMS, PressureWith the MinerVa project, the CiS Research Institute is launching the development of a MEMS Pirani sensor for pressure measurement in the fine high vacuum range. The potential applications are diverse, for example in the production of thin functional layers using physical vapor deposition (PVD)
Happy Easter – Creative competition for the children of our employees
/in CiS generalOnce again this year, the management of the CiS Research Institute invited employees to take part in a creative hands-on activity during the Easter period. The children of all employees were invited to submit self-drawn pictures of the Easter bunny or Easter crafts by today. Each participating child received a sweet surprise as a reward. The numerous creative submissions from the young artists can be admired in our online gallery.
High-end acceleration sensors
/in MEMSThe project dealt with the development of capacitive accelerometers with a resolution of 0.001⁰ based on chip-level processes. The main features are a significantly increased seismic mass, a laterally arranged differential capacitor and a hermetic package
Photoacoustic gas sensors with reference gas sensor
/in MEMSThe focus of the completed PAS research project was the development of a piezoresistive microphone component based on micromechanical systems (MEMS) for highly integrated photoacoustic gas sensors. The sensor is suitable for an application range from -40⁰C to 140⁰C. Applications are in the field of climate and environmental protection to improve energy management, air quality testing or in medical technology as highly sensitive breathing gas sensors.
Defect mechanisms in silicon – Lectures at the DPG Spring Conference in Berlin
/in Events, Silicon DetectorsFrom 17th-22nd March 2024, the Sektion Kondensierte Materie (SMK) of the Deutsche Physikalische Gesellschaft e. V. (DPG) together with its specialist associations and working groups is organizing the DPG Spring Conference on the campus of the Technical University of Berlin. In four contributions, Dr. Kevin Lauer and young researchers will present their latest scientific results on various defect mechanisms in silicon at different doping levels and invite discussion