SPIE Photonics West 2022 in San Francisco
We are very pleased to be back in San Francisco next week as an exhibitor in the German Pavilion at SPIE Photonics West and to be able to present the latest development results
BDMon – Vital monitoring in-ear sensor for non-invasive beat-to-beat blood pressure monitoring
/in Medical technology, MOEMS /by CiSThe non-invasive, cuff-free measurement of blood pressure suitable for everyday use is one of the central goals of the ZIM project “BDMon”, which started in January 2022. Together with partners from industry and research, the in-ear sensor developed at the CiS Research Institute will be transferred into medical products
PoRr project launched to develop photodiodes without back reflection
/in MOEMS /by CiSPhotodiodes without back reflection improve stray light sensitive applications such as particle measurement devices, making them more accurate, faster and cheaper. In the newly launched PoRr research project, various approaches to structuring and antireflection coating of silicon are being analyzed and tested for this purpose
InnoCON Thuringia 2021 also starts online in 2021
/in Events, IR, Pressure /by CiSInnoCON, the flagship event for the implementation and further development of the Thuringian Innovation Strategy, has just started. Steffen Biermann presents the joint project “IR sources for modern gas sensors”. Together with CMOS IR GmbH, the CiS Research Institute has developed a technology for the production of miniaturized IR emitters. Dr. Klaus Ettrich is the contact person for “H2 pressure sensors”. In the consortium HYPOS the CiS Research Institute developed a hydrogen resistant MEMS based pressure sensor, which can be used as a component in a H2 multisensor system that determines not only the pressure but also the temperature, residual gases and the concentration of hydrogen
2nd Status Workshop of the BMBF Growth Core HIPS: “Silicon meets Ceramics
/in Events, MEMS, Packaging, Pressure /by CiSAt the 2nd HIPS “Silicon meets Ceramics” status workshop, the alliance partners will provide an overview of the current status of their R&D work. Tomorrow’s online event will focus on high-performance sensor technology, multilayer ceramic technology and silicon-based packaging technology
Development of Stacking Technologies for Resonant Silicon Differential Pressure Sensors (ReSi-DDS)
/in MEMS, Pressure, Waferprocessing /by CiSResonant pressure sensors have versatile potential for applications in the hydrogen economy. The newly launched research project ReSi-DDS of the CiS Research Institute aims at the development of stacking technologies for the fabrication of resonator structures for resonant silicon pressure sensors
CiS Research Institute at Compamed 2021
/in Events, IR, Medical technology, MOEMS, UV /by CiSAt the IVAM joint booth in Hall 13, we will present our development highlights under the slogan “Microsensors for tomorrow’s world” at Compamed 2021 in Düsseldorf. Dr. Martin Schädel reports on “Optical Blood Pressure Monitoring with PPG Sensors” at the COMPAMED HIGH-TECH Forum by IVAM
CiS Forschungsinstitut is a founding member of SensorikNet e.V.
/in CiS general /by CiSThe CiS Research Institute is a founding member of SensorikNet e.V., an association founded by Thuringian entrepreneurs for developers, manufacturers and users of sensors and microelectronics
Current research results at the MikroSystemTechnik Kongress
/in Events, MEMS, MOEMS /by CiSWe will present current research results in several papers at the MikroSystemTechnik Kongress from November 8 to 10, 2021. Topics will include mechanical and optical silicon-based components, packaging as well as practical applications in business and quantum technologies
Recording of our latest MEMS webinar is available [Video]
/in Events, MEMS /by CiSThe speakers Dr. Klaus Ettrich, Sebastian Pobering and Michael Blech held a webinar on October 21 on the topic of “Piezoresistive silicon pressure sensors for higher operating temperatures up to approx. 300°C”. In the webinar, which lasted about 45 minutes, there was an introduction to the structure and essential properties of this type of sensor, and in the second part, solutions for extending the operating temperature range up to approx. 300°C were presented