For the possible use of ASi-Sii defects as qubits in quantum technology, their precise local generation is an essential prerequisite. At the CiS Research Institute for Microsensor Technology, local light centers in indium-doped silicon have now been generated and detected for the first time by local laser quenching
The new research project NivLer at the CiS Research Institute addresses the development of a retrofit kit for non-invasive pressure measurement in process pipes in order to be able to non-destructively record and digitize various condition variables
With the started project “Piezo-junction effect based on-chip multi-sensors” the effects of environmental influences on differently designed pn-junctions or more complex bipolar lateral and vertical on-chip silicon structures will be investigated at the CiS Research Institute
In the successfully completed DefEin project, doping technologies were developed that enable high energy resolution of radiation sensors consisting of silicon by keeping the highly doped regions on the entrance side of the radiation to be detected as flat as possible
On Wednesday, June 15, 2022 at 1:00 PM, Prof. Thomas Ortlepp and Dr. Kevin Lauer will be speakers at the IMN Colloquium at the Technical University in Ilmenau. In the lecture “Competence in Silicon – sensor technology and solid state analytics” they will present some selected development topics as well as the broad spectrum of solid state analysis methods
Based on the established 90° scattered light setup, a new optoelectronic particle counter for gas-bearing particles at high volume throughput is developed. Demonstrators are tested for applications in pharmaceutical laboratories
As successor of the BMBF consortium of the same name, it bundles the competences from industry and science along the entire value chain – from the concept to the UV semiconductor to its application. Dr. Olaf Brodersen, Senior Business Unit Manager MOEMS at the CiS Research Institute, was elected to the new board of directors
The speakers Dr. Martin Schädel as well as Dr. Andreas Winzer presented an online webinar on the topic of “3D structured photodiodes” on 14.07. 2021. In the webinar, which lasted just under one hour, they used illustrative examples to report on the variety of new optical sensor solutions using technologies for 3D processing of silicon
Start for the preliminary research project “High-End Acceleration Sensors”(HEB) – The project aims at the development of a CMOS-compatible manufacturing process for high-resolution capacitive MEMS acceleration sensors with a resolution of 0.001⁰ for cost-efficient application as tilt sensor
In the chemical industry, for example in the production of battery cells, precise temperature measurement is required. Within the HotSens project, the CiS Forschungsinstitut succeeded in producing temperature diodes for the high temperature range up to a maximum of 300°C with a maximum of a one-point calibration
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