Time-resolved luminescence analysis of semiconductors
German title: | Zeitaufgelöste Lumineszenzanalyse von Halbleitern | |
Acronym: | TreLAS | |
Duration: | 1st January 2013 - 30th June 2015 | |
Description: | In the TreLAS project, a measurement system was developed to measure minority charge carrier lifetimes in heterostructures, especially those used in multi-junction solar cells. The measurement principle is based on time-resolved single photon counting, while spectrally resolved and temperature-dependent measurements are also possible. This combination of time-, spectral-, and temperature-dependent photoluminescence allows in principle the identification and measurement of different recombination processes from the picosecond to the microsecond range and thus the optimization of the material and interface properties of heterostructures and the multi-junction solar cells based on them. | |
Markets: | Photovoltaics, Metrology | |
Funded by: | BMWI | ![]() |
Project sponsor: | EuroNorm GmbH | |
Funding code: | VF120025 | |
Contact: | Contact us about this project via our former business unit Silicon Detectors | |
News articles about TreLAS: | ||
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Silicon PIN diodes for luminescence detectors 27. October 2013 |
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Sensitive light hunter 3. April 2013 |
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