Defect engineering in silicon for the optimization of sensor properties
|German title:||Defektengineering im Silizium zur Optimierung von Sensoreigenschaften|
|Duration:||1st July 2014 - 31st December 2016|
|Description:||The influence of selected defects in silicon on electrical and mechanical properties of silicon was investigated. The ASi-Sii defect in the silicon was investigated and also specifically influenced by different annealing and irradiation to establish a correlation between the defect concentrations and configurations in the silicon and properties. In particular, the commissioning of a low-temperature FTIR measurement station considerably expanded the characterization possibilities.
The collected experimental findings were incorporated into the ASi-Sii defect model and significantly deepened the understanding of defect formation as well as defect kinetics.
|Project sponsor:||EuroNorm GmbH|
|Contact:||Contact us about this project via our former business unit Silicon Detectors|
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