Defect engineering in silicon for the optimization of sensor properties
| German title: | Defektengineering im Silizium zur Optimierung von Sensoreigenschaften | |
| Acronym: | SiPlus | |
| Duration: | 1st July 2014 - 31st December 2016 | |
| Description: | The influence of selected defects in silicon on electrical and mechanical properties of silicon was investigated. The ASi-Sii defect in the silicon was investigated and also specifically influenced by different annealing and irradiation to establish a correlation between the defect concentrations and configurations in the silicon and properties. In particular, the commissioning of a low-temperature FTIR measurement station considerably expanded the characterization possibilities. The collected experimental findings were incorporated into the ASi-Sii defect model and significantly deepened the understanding of defect formation as well as defect kinetics. |
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| Markets: | Electronics, Metrology | |
| Funded by: | BMWI |  |
| Project sponsor: | EuroNorm GmbH | |
| Funding code: | VF140015 | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
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