Development of defect engineering processes in p-type silicon for fabrication of high-impedance n-in-p silicon detectors
| German title: | Entwicklung von Defektengineeringprozessen in p-Typ Silizium zur Herstellung von hochohmigen n-in-p Siliziumdetektoren | |
| Acronym: | DeSiD | |
| Duration: | 1st April 2015 - 31st August 2017 | |
| Description: | In the project, a high-resistance n-in-p silicon detector was developed, manufactured and tested. Building on successfully developed defect engineering for n-type silicon, processes were developed for n-in-p silicon detectors that increase radiation resistance and thus detector lifetime. In addition, special detector designs for the use of p-type silicon were developed and tested. | |
| Markets: | Electronics, Metrology | |
| Funded by: | BMWI |  |
| Project sponsor: | EuroNorm GmbH | |
| Funding code: | MF140123 | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
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