Thickness double metallization
| German title: | Dicke Doppel-Metallisierung | |
| Acronym: | DiDoMet | |
| Duration: | 1st November 2017 - 30th April 2020 | |
| Description: | The aim of the project was the realization of two-level metallization with layer thicknesses of up to 2 µm, through a technology development for the production of flat edges. In a first step, several wafers were successfully processed with a wet chemical structuring. By structuring flat edges, metal tracks of greater thickness and thus higher conductivity could be superimposed. This enables radiation detectors with tilted conductive paths. | |
| Funded by: | BMWI | ![]() |
| Project sponsor: | EuroNorm GmbH | |
| Funding code: | 49MF170046 | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
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