Silicon detector for electrons with energy 1keV
| German title: | Siliziumdetektor für Elektronen mit Energie 1keV | |
| Acronym: | SiekeV | |
| Duration: | 1st November 2018 - 30th April 2021 | |
| Description: | The focus was on increasing the quantum efficiency of silicon diodes with respect to the irradiation of low-energy electrons. By detecting low-energy electrons, it is possible to take very surface-sensitive scanning electron microscopy images. A real breakthrough was achieved in this project. The quantum efficiency of low-energy electrons of an energy of 1keV was increased from 2% for a standard pn diode to 75% for the newly developed electron detector. This was achieved by optimizing the process parameters. In addition, new design rules were created. The depth of the pn junction and the thickness of the cover layer system are crucial. Both were significantly reduced so that low-energy electrons can generate electron-hole pairs in the silicon with high quantum efficiency. | |
| Funded by: | BMWI |  |
| Project sponsor: | EuroNorm GmbH | |
| Funding code: | 49MF180076 | |
| Contact: | Contact us about this project via our former business unit Silicon Detectors | |
News articles about SiekeV: | ||
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Thuringian development team wins AMA Innovation Award 2022 12. May 2022 |
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Highlights at Sensor+Test 2022 in Nuremberg 3. May 2022 |
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Silicon detector for electrons with energies of 1 keV 15. December 2020 |
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15th Workshop on Advanced Silicon Radiation Detectors in Wien 14. February 2020 |
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