Low Gain Avalanche Detectors for 1keV Electrons
| German title: | Low Gain Avalanche Detektoren für 1keV Elektronen | |
| Acronym: | eLGAD | |
| Duration: | 1st November 2022 - 30th April 2025 | |
| Description: | Based on silicon-based low gain avalanche diodes (LGAD), a detector is to be developed with such high sensitivity that low-energy electrons can be detected with it. The challenge is that low-energy electrons have only a small penetration depth in silicon. Electron-hole pairs that generate a detectable signal are therefore only generated in a small area. The goal is to collect and amplify as many of the generated electron-hole pairs as possible. This means to obtain a high quantum efficiency in the targeted range. In addition, the dark current of the detectors must be sufficiently small, even with bias voltage, to be able to evaluate the typically small signals. |
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| Funded by: | Federal Ministry of Economic Affairs and Climate Action |  |
| Project sponsor: | Euronorm | |
| Funding code: | 49MF220099 | |
News articles about eLGAD: | ||
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Defect mechanisms in silicon – Four contributions at GADEST 2024 4. September 2024 |
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Defect mechanisms in silicon – Lectures at the DPG Spring Conference in Berlin 6. March 2024 |
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