From 8th-13th September 2024, the international conference series GADEST (Gettering and Defect Engineering in Semiconductor Technology) will take place in Bad Schandau. Every two years, it serves as a discussion platform for science and industry on the physics of semiconductor defects, material properties and technological manufacturing aspects based on them.
Together with research partners, the CiS Research Institute will report on defect mechanisms in silicon at different doping levels in four papers. In the evening poster session (booth M10) on Monday, Dr. Kevin Lauer from the CiS Research Institute will explain the results of investigations of Tl-doped silicon by photoluminescence at low temperature. Theoretical considerations on boron defects in silicon will also be presented by young researcher Aaron Flötotto in his poster (stand MP13) on this evening.
In the lecture session WeM1 “Si-based Quantum devices” on Wednesday, Dr. Kevin Lauer will present another research highlight of the CiS Research Institute. His lecture will deal with the results of the investigation of ASi-Sii defects as qubits, provided that these defects can be precisely generated locally. At the CiS Research Institute, it was possible for the first time to generate and detect local light centers in indium-doped silicon by local laser quenching.
The presentation by junior researcher Katharia Peh “Relationship between the P-line in indium-doped silicon spectra and the recent ASi-Sii defect model” on Thursday contains further details of the investigations.
The contributions are also a result of the joint research at the Technical University of Ilmenau, which is supervised by Dr. Kevin Lauer as part of his work at this university.
Individual contributions will be published in the regular special issue of Physica Status Solidi A, in the category Gettering and Defect Engineering in Semiconductor Technology (GADEST 2024).
