Silicon-based sensors manufactured using MEMS technologies are ideal for measuring physical quantities such as force, volume and shape change, position, inclination, pressure, torsion, flow, acceleration, and much more. Their advantages lie in their high sensitivity despite their small size, the associated high signal-to-noise ratio, high electronic stability, and a very linear characteristic curve. Commercial products are therefore widely available on the market. The use of the resonance frequency as a measured variable has the advantage that it is not influenced by changes in signal amplitude, drift effects, or noise effects.
The new research project at the CiS Research Institute focuses on the development of technological complexes for the production of resonator structures for resonant sensors based on polycrystalline silicon for use as pressure sensors.
The goals are high frequency stability, low sensitivity to static pressure, and transferability to other MEMS such as acceleration sensors with benchmark performance and high stability.
The research and development work described was funded by the German Federal Ministry for Economic Affairs and Energy (BMWE) as part of the research project “Polysilicon-based Resonant Microsensors” (PaRiS).
Funding code: 49MF240150
