Launch of the Pash-Sense Project: Development of a Highly Sensitive Hydrogen Sensor Based on a Palladium-Silicon Schottky Diode
To enable the early detection of hydrogen leaks at trace levels, the CiS Research Institute is developing a novel, highly sensitive sensor based on a Pd/Si Schottky diode with an integrated heating structure. To ensure the flawless manufacturing required for this component, the wafer inspection system – recently approved as part of the “TechWB” investment project – is being used for high-precision defect analysis in the submicrometer range
