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Assembly & Packaging – compact, application-specific and industry-relevant

23. April 2016/in MOEMS, Packaging, UV

A new micro assembly center expands the technological basis for new concepts for the fully automated production of application-specific UV LED modules in different series sizes. The modular system concept enables the most important AVT assembly steps to be carried out in one device

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https://www.cismst.de/wp-content/uploads/news-2016-04-23-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2016-04-23 08:45:002022-07-12 10:11:22Assembly & Packaging – compact, application-specific and industry-relevant

Wafer technologies for micro laser illuminations

22. April 2016/in MOEMS, Waferprocessing

The CiS Research Institute has developed a cost-effective technology for the production of highly stable laser illuminators in a batch process. In this process, up to 20,000 of these modules are mounted on a glass wafer. The VCSEL-based laser modules are characterized by high beam quality

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https://www.cismst.de/wp-content/uploads/news-2016-04-22-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2016-04-22 09:15:002021-02-19 09:23:50Wafer technologies for micro laser illuminations

Strain gauges for demanding applications

17. March 2016/in Force, MEMS, Packaging

For precision force measurements, the CiS Research Institute from Erfurt has developed miniaturized silicon strain gages (Si strain gages) with integrated measuring bridge. By using semiconductor technologies, a higher long-term stability, precision and measurement reliability is achieved compared to ductile metal strain gages

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https://www.cismst.de/wp-content/uploads/news-2016-03-17-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2016-03-17 08:20:002021-02-19 08:25:52Strain gauges for demanding applications

Semiconductor Complex Measuring Station

29. January 2016/in Measurement, Pressure

Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors

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https://www.cismst.de/wp-content/uploads/news-2016-01-29-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2016-01-29 07:56:002021-02-23 13:20:28Semiconductor Complex Measuring Station

“STREAM” – New EU project launched at CiS

25. January 2016/in Events, Jobs, Silicon Detectors

On 18 January 2016, the launch event for a new research project with 11 European partners from Switzerland, Germany, the Netherlands, Great Britain, Austria, Italy, Norway and France took place at CERN. STREAM stands for “Smart Sensor Technologies and Training for Radiation Enhanced Applications and Measurements” and is funded by the EU with 3.9 million euros

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https://www.cismst.de/wp-content/uploads/news-2016-01-25-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2016-01-25 13:58:002021-02-18 14:05:00“STREAM” – New EU project launched at CiS

Assembly & Packaging – compact, application-specific and industry relevant

17. November 2015/in MOEMS, Packaging, UV

A new micro assembly centre expands the technological basis for the development of technological solutions for the fully automated production of application-specific UV LED modules in different series sizes. The modular system concept enables the most important packaging steps to be carried out in one unit

Read more
https://www.cismst.de/wp-content/uploads/news-2015-11-17-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2015-11-17 08:57:002022-07-12 10:11:59Assembly & Packaging – compact, application-specific and industry relevant

Semiconductor Complex Measuring Station

12. November 2015/in Measurement, Pressure

Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors

Read more
https://www.cismst.de/wp-content/uploads/news-2015-11-12-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2015-11-12 10:53:002021-02-23 13:20:40Semiconductor Complex Measuring Station

Wafer technologies for micro laser illuminations

11. November 2015/in MOEMS, Waferprocessing

The CiS Research Institute has developed a cost-effective technology for the production of highly stable laser illuminators in a batch process. In this process, up to 20,000 of these modules are mounted on a glass wafer. The VCSEL-based laser modules are characterized by high beam quality

Read more
https://www.cismst.de/wp-content/uploads/news-2015-11-11-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2015-11-11 10:39:002021-02-19 10:43:27Wafer technologies for micro laser illuminations

New sensor technologies for pulse contour analysis, determination of heart rate variability and measurement of blood flow in tissue

10. November 2015/in Medical technology, MOEMS, Packaging

CiS Research Institute introduces miniaturized silicon integrated multispectral photoplethysmography sensors. These are placed in the external auditory canal and are individually adapted to the patient

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https://www.cismst.de/wp-content/uploads/news-2015-11-10-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2015-11-10 10:20:002021-02-19 10:24:26New sensor technologies for pulse contour analysis, determination of heart rate variability and measurement of blood flow in tissue

Highly stable temperature diodes with single-point calibration for the temperature range up to 220°C

9. November 2015/in Silicon Detectors, Waferprocessing

At the CiS Research Institute, technological processes for silicon wafers have been developed, with which a reproducible sensitivity dU/dT, i.e. the slope of the voltage versus temperature, could be achieved

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https://www.cismst.de/wp-content/uploads/news-2015-11-09-home.jpg 90 120 CiS https://www.cismst.de/wp-content/uploads/logo-trans.png CiS2015-11-09 09:55:002021-02-19 09:58:21Highly stable temperature diodes with single-point calibration for the temperature range up to 220°C
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  • ISEC 2025 – Full Agenda with plenary speakers is available

    9. May 2025
  • CiS Research Institute at the international conference MATERIALSMEET2025 in Budapest

    2. April 2025
  • Visit us at the HANNOVER MESSE 2025

    25. March 2025
  • End of project PoRr: Photodiodes without back reflection

    20. March 2025
  • CoGeQ project meeting at the CiS Research Institute

    14. March 2025

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