Electromigration Effects at ESREF in Vienna
The international ESREF conference in Vienna focuses on the reliability and failure analysis of components in microelectronics, nanoelectronics, and optoelectronics. On September 24, 2026, Julia Baldauf, a researcher at the CiS Research Institute, will present the results of the DotIR research project. Appropriate doping in MoSi2 is intended to reduce electromigration effects and increase the service life
