Measurement

Machine Learning Electromigration Parameters (MEL)

31. March 2026/in Measurement

The current research project, Machine Learning Electromigration Parameters (MEL), aims to lay the groundwork for new software tools to characterize and optimize materials with regard to electromigration.
This effect limits the service life and long-term stability of semiconductor devices in microsensor technology, power electronics, and integrated circuits. A better understanding of the physicochemical processes paves the way for new, improved developments

Industry-relevant research findings at the DPG’s spring meetings

5. March 2026/in Events, Measurement

In the first half of March, the German Physical Society will hold its annual spring conferences in Mainz, Dresden, and Erlangen. The CiS Research Institute will present current research findings in the areas of defect-based light emitters in doped silicon, systematic comparisons of NV diamond materials, qubits in silicon-based quantum technology, and electromigration experiments through lectures and posters at Johannes Gutenberg University in Mainz and the Technical University of Dresden

VACOM receives Thuringia Innovation Award 2025 for miniaturized vacuum sensor CASSINI

19. December 2025/in Measurement, MEMS

VACOM wins the Thuringian Innovation Award 2025 and sets new technological standards with its new miniaturized vacuum sensor CASSINI. The scientific and technological basis for the microelectromechanical system (MEMS) was laid in joint research projects with the CiS Research Institute

From research to practice – contributions from the CiS Research Institute at SMSI 2025

6. May 2025/in Events, Measurement, MEMS, MOEMS

Parallel to the Sensor+Test trade fair in Nuremberg from May 6 to May 8, 2025, the 3rd Sensor and Measurement Science International (SMSI) Conference will take place at the Congress Center Nuremberg. The CiS Research Institute will be represented with nine scientific contributions

End of project PoRr: Photodiodes without back reflection

20. March 2025/in Measurement, MOEMS, Packaging

In the PoRr project, a team of scientists from the CiS Research Institute developed photodiodes with significantly reduced back reflection. Reflections are reduced by 15% by means of special surface structuring. Specially developed measuring stations make it possible to record the proportion of total reflection at different wavelengths as well as the angular distribution of the reflected light at different angles of incidence

Hydrogen and sensor technology – our topics at the elmug4future 2024 technology conference

15. October 2024/in Events, Measurement, MEMS

On 16th and 17th October 2024, experts from various fields of knowledge will address the use of hydrogen and the associated challenges for its safe use at the elmug4future technology conference. Dr. Heike Wünscher and Dr. Ingo Tobehn-Steinhäuser from the CiS Research Institute will present current sensor developments and research projects for hydrogen measurement technology in their lectures

On the way to the ASi-Sii qubit

2. July 2024/in Measurement, MOEMS, Quantum

For the possible use of ASi-Sii defects as qubits in quantum technology, their precise local generation is an essential prerequisite. At the CiS Research Institute for Microsensor Technology, local light centers in indium-doped silicon have now been generated and detected for the first time by local laser quenching

Project start NivLer: Retrofit kit for non-invasive pressure measurement

9. August 2023/in Measurement, MEMS, Pressure

The new research project NivLer at the CiS Research Institute addresses the development of a retrofit kit for non-invasive pressure measurement in process pipes in order to be able to non-destructively record and digitize various condition variables

Piezo-junction effect based on-chip multi-sensors

13. July 2023/in Measurement, MEMS, Process development

With the started project “Piezo-junction effect based on-chip multi-sensors” the effects of environmental influences on differently designed pn-junctions or more complex bipolar lateral and vertical on-chip silicon structures will be investigated at the CiS Research Institute

Project completed: DefEin – Si detectors with flat entrance window

4. November 2022/in Measurement, UV

In the successfully completed DefEin project, doping technologies were developed that enable high energy resolution of radiation sensors consisting of silicon by keeping the highly doped regions on the entrance side of the radiation to be detected as flat as possible