The ambitious goal of the research project was achieved with the successful development of a silicon-based high-pressure sensor with front-flush media contact for a measuring range up to 300 MPa. The front-flush media connection makes the sensor ideal for sensitive areas with strict hygiene regulations, such as in the food industry or pharmaceuticals
In the OTB project, scientists at the CiS Research Institute pursued the goal of reducing or optimizing cross-sensitivity for highly stable and highly accurate piezoresistive resistance bridges consisting of resistance tracks implanted in single-crystal silicon with a high temperature coefficient
The newly launched NO-TICE research project at the CiS Research Institute involves investigating ways of compensating for the influence of temperature, particularly on the zero point of the raw signal in sensors with very low transverse strain sensitivity, in order to minimize the amount of calibration required and thus conserve resources in terms of costs, time, and materials
The UDM research project is aimed at the development and prototype production of piezoresistive absolute pressure sensors with ultra-small dimensions yet very high sensitivities based on single-crystal MSTS membranes
In the BerNieDru research project that has been launched, a piezoresistive pressure sensor is to be developed for the pressure range up to 2 mbar, which can withstand a burst pressure of at least 1 bar by adapting the membrane geometry
In the newly launched M2NL project, a development team at the CiS Research Institute is analyzing measurement data from various piezoresistive pressure sensors and wants to use the analysis results to calculate mechanical parameters and their temperature dependency. The aim is to investigate non-linear effects and their influence in the simulation using the FEM tool ANSYS Multiphysics
Various simulation methods can be used for the development of piezoresistive pressure sensors. The aim of the mMoDS research project is to describe the system model using modular sub-models in order to enable an efficient design process that takes into account different design and technological variants, thereby reducing the number of detailed, computationally intensive FEM simulations
During the Hannover Messe, which starts next week, the CiS Research Institute will be presenting an electrically isolated incremental sensor at the joint Thuringian stand in Hall 3, Stand D76. As part of the GalGiS funding project, new silicon technologies have been developed to achieve such galvanic isolation at chip level
With the MinerVa project, the CiS Research Institute is launching the development of a MEMS Pirani sensor for pressure measurement in the fine high vacuum range. The potential applications are diverse, for example in the production of thin functional layers using physical vapor deposition (PVD)
At the CiS Research Institute, pressure sensors based on NV centers in diamond were produced using industrial manufacturing methods in cooperation with partners from industry and science. The results of the Qind research project will be presented at the 28th Hasselt Diamond Workshop SBDD
Konrad-Zuse-Str. 14
99099 Erfurt
Germany
Tel.: +49 361 663 1410
E-Mail: info@cismst.de
