The newly designed piezoresistive pressure sensor chips with analog integrated temperature compensation are suitable for operating temperatures of up to about 300°C. The sensor is based on an intelligent connection of the measuring bridge with passive components. The basis is an intelligent interconnection of the measuring bridge with passive components
Next week, the SENSOR+TEST 2021 trade fair and the accompanying international congress SMSI 2021 will start. Both events will take place online and the CiS Research Institute will be represented with a digital presence and a presentation. Get your free online ticket
This week at HM21 Digital Edition, we present current research topics and project results in the development of silicon-based MEMS and MOEMS sensor concepts
As a specialist in the development of silicon-based pressure sensors, the CiS Research Institute is developing and testing palladium-coated MEMS structures with its partners in the H2MEMS project. The volume expansion of palladium during hydrogen deposition is being tested as a measuring principle
Direct contact with the medium is difficult to implement for silicon-based microsensors. In order to fully exploit miniaturisation, corrosion protection is applied at chip level. This makes an application in more demanding environments possible even without additional protective constructions
Harsh environmental conditions require robust and stable pressure sensors. The new and further development of wafer-level packaging technologies increases performance, extends areas of application and reduces manufacturing costs. The result is patent pending
The participants of the CiS MEMS workshop on pressure sensor technology discussed online the development of sensor elements, their assembly, test methods and applications. Innovative AVT, in particular wafer bonding processes, were a focal point this time
Simultaneous measurement of differential pressure and process pressure – The approach pursued by CiS uses miniaturised pressure sensors which can be applied to carrier materials such as silicon or ceramics by means of flip-chip technologies. By means of adapted passivation processes (ALD, Parylene, etc.), the pressure sensors are available in a media-resistant design
Our employee Dr. Robert Täschner was awarded the Silicon Science Award for his dissertation “Process and sensor development for production-ready silicon-based pressure sensor systems suitable for high temperatures”. The CiS e.V. awards this prize for outstanding scientific achievements in the field of microsystems technology
For the implementation of the National Hydrogen Strategy, the CiS Research Institute is partner in two research projects. The HYPOS consortium develops solutions for the entire value chain and broad application of green hydrogen in many industries
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Germany
Tel.: +49 361 663 1410
E-Mail: info@cismst.de
