At HMI 2019, CiS will be presenting sophisticated packaging for time-of-flight camera modules, double-sided microstrip detectors and other current development results in a double pack at the Thuringia joint LEG stand in Hall 4, Stand F34 and at the stand of Forschungs- und Technologieverbund Thüringen e.V. (FTVT) in Hall 2, Booth A27
At Sensor+Test 2018 in Nuremberg, the CiS Research Institute will present a high-temperature pressure sensor system suitable for series production with an operating temperature of up to 300°C
Our exhibition at the Innovation Day of SMEs of the BMWi on June 7, 2018 in Berlin generated good feedback and high interest. Here, our research institute presented the INNO-KOM project “Wafer Level Packaged Pressure Sensor With Through Silicon Vias”
With the repeated participation as an exhibitor on the community stand of the Thuringian State Development Corporation, the CiS Research Institute could register consistently positive feedback in numerous discussions with interested parties from industry and medium-sized businesses
Piezoresistive pressure sensor chips from CiS are used where high precision, stability and reliability are required. The same sensor principle is now also used for force measurement in silicon strain gages. The strain-sensitive resistors are monolithically integrated into wafer-thin chips as Wheatstone measuring bridge
At Sensor+Test 2017, the CiS Research Institute for Microsensors presents highly stable, media-resistant barometric pressure sensors in MEMS technology
Synthetic diamond coatings can be manufactured on an industrial scale to be CMOS-compatible. The manufacturing and processing costs are comparable to those of other technologies, such as passivation or contacting. In order to implement diamond coatings as passive as well as active functional layers in sensors and to evaluate their industrial applicability, the CiS Research Institute is dedicated to pressure measurement in aggressive working environments and intelligent thermal management in current R&D projects
For precision force measurements, the CiS Research Institute has developed miniaturised silicon strain gauges (Si-DMS) with an integrated measuring bridge. The piezoresistive resistors are monolithically integrated in single-crystal silicon (K-factor = 80) and are available as a double strain element and as a full bridge
Researchers and developers from both institutions are working together on a project to achieve greater reliability in the development and production of application-specific piezoresistive pressure sensors with a multi-physical simulation
The SMARTER-SI project offers a novel manufacturing platform across Europe on which innovative and intelligent sensor components and microsystems can be produced cost-effectively in small and medium quantities. Around 5.3 million euros in funding will flow into the development and testing of this platform until 2018
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Germany
Tel.: +49 361 663 1410
E-Mail: info@cismst.de
