The newly launched research project “Stress-independent on-chip temperature sensing for silicon strain gauges (SOT)” aims at developing a temperature sensing of piezoresistive transducers optimized to mechanical stress. This is to be achieved by using on-chip integrated bipolar structures. In this project, technological concepts will be developed and the suitability of various semiconductor physical effects for on-chip temperature measurement with as little cross-sensitivity as possible will be evaluated. The solutions found are to be verified with the construction of demonstrators in order to develop customer-specific silicon strain gages which can be compensated with less effort and better with regard to the temperature dependence of the stress signal in a very wide temperature range.
The envisaged lower cross-sensitivity with respect to temperature and mechanical stress of additional sensor components – sensor parameters complementary to the stress measurement can be determined – will enable improved control of processes and equipment, which will reduce energy consumption, extend maintenance cycles (resource efficiency) and reduce consumption of operating and auxiliary materials (e.g. lubricants). A high coupling factor should allow a simpler design of sensor electronics with reduced consumption of electronic components and manufacturing steps. Good processability with assembly and interconnection technology processes will enable the use of both simpler and energy- and material-saving technologies.
The research and development work in the project “Stress-independent on-chip temperature detection” (SOT) is funded by the German Federal Ministry of Economic Affairs and Climate Action.
Funding code: 49MF220093
