For precision force measurements, the CiS Research Institute from Erfurt has developed miniaturized silicon strain gages (Si strain gages) with integrated measuring bridge. By using semiconductor technologies, a higher long-term stability, precision and measurement reliability is achieved compared to ductile metal strain gages
Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors
On 18 January 2016, the launch event for a new research project with 11 European partners from Switzerland, Germany, the Netherlands, Great Britain, Austria, Italy, Norway and France took place at CERN. STREAM stands for “Smart Sensor Technologies and Training for Radiation Enhanced Applications and Measurements” and is funded by the EU with 3.9 million euros
A new micro assembly centre expands the technological basis for the development of technological solutions for the fully automated production of application-specific UV LED modules in different series sizes. The modular system concept enables the most important packaging steps to be carried out in one unit
Manufacturing technology and sensors are tested and characterized with a high level of metrological effort in order to be able to demonstrate the desired properties with long-term stability. Different measurement methods are required for this purpose. The new semiconductor complex measuring station represents a milestone in the characterization of technologies and sensors
The CiS Research Institute has developed a cost-effective technology for the production of highly stable laser illuminators in a batch process. In this process, up to 20,000 of these modules are mounted on a glass wafer. The VCSEL-based laser modules are characterized by high beam quality
CiS Research Institute introduces miniaturized silicon integrated multispectral photoplethysmography sensors. These are placed in the external auditory canal and are individually adapted to the patient
At the CiS Research Institute, technological processes for silicon wafers have been developed, with which a reproducible sensitivity dU/dT, i.e. the slope of the voltage versus temperature, could be achieved
For the 4th time, the research institute located in the southeast of the city of Erfurt participates in the Erfurt Science Night. On November 6, 2015, scientists and engineers will present their research results and applications
The CiS Research Institute starts developments on a miniaturized optical sensor for investigations of blood flow velocity in the skin. The sensor principle is based on the laser Doppler method. Here, elastic scattering at the moving blood components causes a shift of the light wavelength, which becomes measurable by coherent superposition with the excitation light
Konrad-Zuse-Str. 14
99099 Erfurt
Germany
Tel.: +49 361 663 1410
E-Mail: info@cismst.de
