While sensors exist for monitoring the lower explosive limit (LEL), early detection of leaks—even at trace levels (ppm)—is crucial for proactive safety. A sensor capable of reliably detecting hydrogen concentrations far below the LEL makes it possible to locate and repair leaks before significant amounts of hydrogen escape and dangerous situations can develop. Such highly sensitive sensors are therefore an indispensable tool for the regular inspection and monitoring of pipelines, flanges, valves, and storage tanks. The newly funded project at the CiS Research Institute aims to develop, manufacture, and comprehensively characterize a novel, highly sensitive hydrogen sensor based on a palladium-silicon (Pd/Si) Schottky diode. This approach exploits the strong dependence of the Schottky barrier height on the low hydrogen concentration in palladium (α-phase). The sensor is designed to operate in energy-efficient reverse-bias mode. A simplified fabrication process on Si(100) substrates with thermal oxide passivation, as well as an integrated, cost-effective heating structure made of an established resistive material (e.g., nickel-chromium), are intended to facilitate rapid thermal desorption and reset of the sensor.
The project is supported by the wafer inspection system approved as part of the “TechWB” investment project, which, with its high-precision defect analysis in the submicrometer range, provides the technological foundation necessary for the flawless production of these highly sensitive sensors.
The research and development work described was funded by the Federal Ministry for Economic Affairs and Energy (BMWE) as part of the research project “Development of a highly sensitive hydrogen sensor based on a palladium-silicon Schottky diode with integrated thermal reset for α-phase operation” (Pash-Sense).
Funding code: 49VF123456
