Over the next five days, our experts will be showcasing new project results and applications of silicon-based MEMS and MOEMS sensor concepts in Hall 13 at the LEG’s Thuringian joint booth (Booth E24) in Hanover
The 5th Symposium on Electronics and System Integration at Landshut University of Applied Sciences will kick off on 15th April 2026, with three plenary presentations. In one of the presentations, Toni Schildhauer of the CiS Research Institute will discuss the topic “MEMS-IR Emitters: From Digital Twins to Novel Connection Techniques and Standardized Measurement Protocols.”
The Easter holidays with family and friends are just around the corner, and the management of the CiS Research Institute once again invited everyone to participate in a creative hands-on activity. The many creative submissions from the young artists can be viewed in our online gallery
The current research project, Machine Learning Electromigration Parameters (MEL), aims to lay the groundwork for new software tools to characterize and optimize materials with regard to electromigration.
This effect limits the service life and long-term stability of semiconductor devices in microsensor technology, power electronics, and integrated circuits. A better understanding of the physicochemical processes paves the way for new, improved developments
Dr. Martin Schädel, Head of the MOEMS department at the CiS Research Institute, will discuss new opportunities arising from technologies for three-dimensional structuring of silicon in a webinar on Monday, 30th March 2026, at 15:00
The 9th pitch event of the Thuringian competition getstarted2gether took place on 24th March 2026, at the Eiermannbau in Apolda. Ten technology-focused startups from Thuringia were awarded a total of one million euros in funding provided by the Thuringian Ministry of Economic Affairs
The new EiS research project focuses on the development of innovative stacked-layer MEMS-IR emitters. The goal is to create an even more miniaturized and cost-effective chip that offers at least the same light output as existing chips, thereby opening up new areas of application
Silicon strain gauges (Si-SG) offer numerous outstanding properties. To reduce or compensate for the effects of temperature, temperature-sensing resistors, temperature diodes, and bipolar transistors were also integrated onto the same chip. The on-chip pnp transistors made it possible to implement temperature-compensated sensor configurations
In the first half of March, the German Physical Society will hold its annual spring conferences in Mainz, Dresden, and Erlangen. The CiS Research Institute will present current research findings in the areas of defect-based light emitters in doped silicon, systematic comparisons of NV diamond materials, qubits in silicon-based quantum technology, and electromigration experiments through lectures and posters at Johannes Gutenberg University in Mainz and the Technical University of Dresden
Typical heat flow sensors operate according to the Seebeck effect. The new development from the CiS Research Institute, based on temperature diodes connected in series, significantly increases the signal amplitude. These sensors are considerably cheaper to manufacture and can also measure absolute temperatures
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Tel.: +49 361 663 1410
E-Mail: info@cismst.de
