InOxA Project Completion: Innovative Oxide Structures for the Passivation of Silicon Interfaces
In the InOxA research project, the TOPCon contact developed for silicon photovoltaics was adapted for use in sensor diodes. To achieve this, a thin barrier oxide and highly doped polysilicon were deposited onto the base material, so that the contact also serves to passivate both the active area and the substrate contact
