Silicon-based microsensors at SENSOR+TEST in Nuremberg
From 9th-11th June 2026, the CiS Research Institute will once again be exhibiting at the international gathering for sensor, measurement, and testing technology in Nuremberg. At SENSOR+TEST 2026, interested visitors can meet our experts again this year at Booth 501 in Hall 1 to discuss the latest research findings in silicon-based microsensor technology.
At the 23rd ITG/GMA Symposium “Sensors and Measurement Systems 2026,” the accompanying scientific conference at the Nuremberg Convention Center West (NCC West), the CiS Research Institute will be represented with four scientific presentations
Launch of the Pash-Sense Project: Development of a Highly Sensitive Hydrogen Sensor Based on a Palladium-Silicon Schottky Diode
To enable the early detection of hydrogen leaks at trace levels, the CiS Research Institute is developing a novel, highly sensitive sensor based on a Pd/Si Schottky diode with an integrated heating structure. To ensure the flawless manufacturing required for this component, the wafer inspection system – recently approved as part of the “TechWB” investment project – is being used for high-precision defect analysis in the submicrometer range
Competitive German Quantum Computer (CoGeQ): Subproject involving the development of demonstrators successfully completed
The final results of the research conducted as part of the “CoGeQ” project were presented at Quantum Photonics 2026 in Erfurt in early May. The collaborative project aimed to demonstrate a mobile spin-based quantum processor based on NV centers in diamond. The CiS Research Institute was responsible for the field of assembly and interconnection technology and developed an efficient method for assembling the layered stacks consisting of a diamond chip and a silicon interposer
Launch of the aQuSiS Project: Acceptor-Based Quantum Systems in Silicon
Color centers such as the G- or T-center in silicon are currently used as the building blocks for silicon-based quantum technology. The aQuSiS research project aims to realize indium-based acceptor defects as readily accessible quantum systems for the first time. The increased understanding of the structure and functioning of this elementary quantum building block could serve as the foundation for its continued integration into modern quantum technologies
Project Completion NH3-BZ: Photoacoustic Sensor for Hydrogen Production
The sensing cell is designed to determine the residual ammonia content in a dry N₂/H₂ gas mixture—a blend of nitrogen (N₂) and hydrogen (H₂) containing 75% hydrogen by volume—and is intended to enable real-time monitoring. The developed solution is based on innovative thermal emitters and operates without a chopper. Custom sensor elements can be quickly integrated
CiS Research Institute Returns as an Exhibitor at Quantum Photonics
On 5th and 6th May 2026, the CiS Research Institute will present its portfolio of quantum technologies at Booth 615 in Hall 2 at the Erfurt Trade Fair. Dr. Mario Bähr, a researcher at the CiS Research Institute, will speak on “Enabling Technologies for Quantum Applications” during a coffee pitch on Tuesday at 15:15
Technologies for the Future: CiS Research Institute at the 2026 Hannover Messe
Over the next five days, our experts will be showcasing new project results and applications of silicon-based MEMS and MOEMS sensor concepts in Hall 13 at the LEG’s Thuringian joint booth (Booth E24) in Hanover
Plenary presentation at the 5th Symposium on Electronics and System Integration
The 5th Symposium on Electronics and System Integration at Landshut University of Applied Sciences will kick off on 15th April 2026, with three plenary presentations. In one of the presentations, Toni Schildhauer of the CiS Research Institute will discuss the topic “MEMS-IR Emitters: From Digital Twins to Novel Connection Techniques and Standardized Measurement Protocols.”
Happy Easter – Creative Contest for Kids
The Easter holidays with family and friends are just around the corner, and the management of the CiS Research Institute once again invited everyone to participate in a creative hands-on activity. The many creative submissions from the young artists can be viewed in our online gallery
Machine Learning Electromigration Parameters (MEL)
The current research project, Machine Learning Electromigration Parameters (MEL), aims to lay the groundwork for new software tools to characterize and optimize materials with regard to electromigration.
This effect limits the service life and long-term stability of semiconductor devices in microsensor technology, power electronics, and integrated circuits. A better understanding of the physicochemical processes paves the way for new, improved developments
